i, l/ nc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SB1588 description ? high dc current gain- : hfe= 5000(min)@lc= -7a ? low-collector saturation voltage- : vce(satr -2.5v(max.)@lc= -7a ? complement to type 2sd2439 applications ? designed for audio, series regulator and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current- continuous collector power dissipation @ tc-25c junction temperature storage temperature range value -160 -150 -5 -10 -1 80 150 -55-150 unit v v v a a w c ?c (" ^011)93 ?vwh yr pin 1.base 2. collector 3. emitter 1 2 3 to-3pml package j;-1"'-'""^ zsc-tf \f v: .1 a . ?-' |i- it " f dim a b c d f g h j k l n q r s l) y z z .4 g mm min 19.90 15,90 5,50 0.90 3.30 2.90 5.90 0 595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 max 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp darlington power transistor 2SB1588 electrical characteristics fc=2b'c unless otherwise specified symbol v(br)ceo vce(sat) vbe(sat) icbo iebo hfe cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain collector output capacitance current-gain ? bandwidth product conditions lc= -30ma; ib= 0 |c= -7a; ib= -7ma lc= -7 a; ib= -7ma vcb=-160v;ie=0 veb= -5v; lc= 0 lc= -7a; vce= -4v le=0;vcb=-10v;f=1mhz ie=2a;vce=-12v min -150 5000 typ. 230 50 max -2.5 -3.0 -100 -100 30000 unit v v v ua ua pf mhz switching times ton tstg tf turn-on time storage time fall time lc=-7a; lbi=-lb2=-7ma, vcc= -70v, rl= 1 0 a 0.8 3.0 1.2 11 s u s 11 s classifications o 5000-12000 p 6500-20000 y 15000-30000
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